Power semiconductors control the flow and conversion of electricity in vehicles, industrial equipment, electronics, and energy systems. As these applications require greater efficiency and smaller power-conversion systems, semiconductor materials that can operate at high voltage while reducing electrical losses have become increasingly important. FLOSFIA is working in this field with gallium oxide and a thin-film deposition technology originating from research at Kyoto University.

FLOSFIA is a Kyoto University spin-off founded in 2011 to commercialize mist chemical vapor deposition technology. The company uses gallium oxide to produce GaO™ power devices and applies its proprietary MISTDRY™ technology to thin-film formation. The company also applies MISTDRY™ technology to electronic materials, industrial materials, electrode materials, functional oxide compounds, plating, and polymers.

Gallium Oxide for Power Conversion

FLOSFIA’s GaO™ power devices use corundum-structured gallium oxide, α-Ga₂O₃, as a semiconductor material. Gallium oxide has a wide bandgap and can be used for high-voltage power applications. FLOSFIA has used the material to produce Schottky barrier diodes (SBDs), with the company reporting an SBD specific on-resistance that was the lowest among commercially available SBDs at the time of its internal investigation. The company also reports technology associated with power-loss reductions of up to 90% compared with previous levels.

The company has continued to demonstrate GaO™ devices at higher voltage and current levels. In 2023, FLOSFIA reported an ampere-class, 1,700-volt gallium oxide SBD, following earlier 600-volt and 1,200-volt SBD sample shipments. The company sees potential applications ranging from consumer and electric-vehicle systems to power-grid equipment, where lower losses and smaller power-conversion equipment can be valuable.

MISTDRY™ and Thin-Film Manufacturing

MISTDRY™ is FLOSFIA’s proprietary thin-film formation method based on mist technology. A solution is converted into a mist and used to form thin films, including metal oxide, metal, and organic films. FLOSFIA also applies related processes to semiconductor single crystals, metal films and polymer materials, giving the technology applications beyond gallium oxide power devices.

The company has built its semiconductor work around MISTDRY™ as a manufacturing technology for high-quality films. FLOSFIA’s current technology portfolio includes MIST EPITAXY®, which is used for high-quality semiconductor single-crystal layers, along with mist-based plating and polymerization processes. FLOSFIA says it has filed more than 250 patent applications related to its processes and films, including applications outside Japan.

From Power Devices to SEMI ecology™

FLOSFIA’s semiconductor work also includes P-type gallium oxide technology. In 2023, the company and JSR announced a new iridium-based film deposition material for α-(IrGa)₂O₃, a P-type semiconductor intended for use with α-Ga₂O₃. In 2025, FLOSFIA reported a further milestone with a normally-off MOSFET using a P-type layer, achieving more than 10 amperes of drain current and moving the technology toward higher-voltage operation and commercialization.

FLOSFIA describes its broader environmental concept as “SEMI ecology™,” covering power losses during semiconductor use as well as materials, manufacturing processes and resource use. In July 2026, the company was selected as a Winner in the Environment category of the WIPO Global Awards after receiving recognition among 33 finalists from more than 1,300 applications across 126 countries. WIPO recognized FLOSFIA’s use of intellectual property around gallium oxide power semiconductor technology, including licensing and partnerships intended to expand commercialization.

ABOUT | TOSHIMI HITORA

Toshimi Hitora is the founder and Chairman of FLOSFIA. A graduate of Kyoto University’s Faculty of Engineering, he is a serial entrepreneur who has worked across research and product development, manufacturing and quality management, sales, marketing, finance, accounting and contracts. Before founding FLOSFIA, he established ALGAN Inc. in 2005, where he worked with aluminum gallium nitride semiconductor technology for ultraviolet sensors. FLOSFIA was founded in 2011 from research originating at Kyoto University.

Hitora led FLOSFIA as President and CEO before becoming Chairman. Under his leadership, the company built its business around gallium oxide power devices and MISTDRY™ technology, while establishing partnerships and intellectual property around its semiconductor technologies. FLOSFIA’s current corporate profile lists Takashi Shinohe as President, while Hitora remains Founder and Chairman.